Publications

2022: Effects of post metallization annealing on Al₂O₃ atomic layer deposition on n-GaN

• Authors: L. Tadmor, E. Brusaterra, E. Bahat Treidel, F. Brunner, N. Bickel, S. Vandenbroucke, C. Detavernier, J. Wuerfl, O. Hilt.
• Partner: FBH, UGent
• Published: November 2022
• https://iopscience.iop.org/article/10.1088/1361-6641/aca42a

2022: A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

• Authors: S. Ditze, S. Ehrlich, N. Weitz, M. Sauer, F. Aßmus, A. Sacher, C. Joffe, C. Seßler, P.
• Partner: FhG IISB (and further organization)
• Published: June 8, 2022; Electronics
• https://www.mdpi.com/2079-9292/11/12/1818

2022: A resonant push–pull DC–DC converter with an intrinsic current source behavior for radio frequency power conversion

• Authors: N. Weitz, S. Utzelmann, S. Ditze; M. März
• Partner: FhG IISB
• Published: January 13, 2022; IEEE Transactions on Power Electronics
• https://ieeexplore.ieee.org/document/9681301

2022: Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

• Authors: Z. Yu; Y. Z. Tan; C. F. Bayer; H. Rauh; A. Schletz; M. März; O. Birlem
• Partner: FhG IISB, NW
• Published: January 5, 2022; IEEE 23rd Electronics Packaging Technology Conference (EPTC)
• https://ieeexplore.ieee.org/document/9663890

2021: GaN-based power devices: physics, reliability and perspectives (Tutorial)

• Authors: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G. Verzellesi, E. Zanoni, E. Matioli
• Partner: IUNET, CNRS (and further organizations)
• Published: November 8, 2021; Journal of Applied Physics
• https://aip.scitation.org/doi/10.1063/5.0061354