Publications
2023: Demonstration of avalanche capability in 800 V vertical GaN-on-Silicon diodes
- Authors: Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
- Partner: CNRS, Siltronic
- Published: November 2023 (as accepted manuscript)
- https://iopscience.iop.org/article/10.35848/1882-0786/ad106c
2023: Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
- Authors: N. Zagni, M. Fregolent, G. Verzellesi, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, E. Bahat Treidel, E. Brusaterra, O. Hilt, M. Meneghini, P. Pavan
- Partner: IUNET, FBH
- Published: November 2023
- https://ieeexplore.ieee.org/document/10329308
2023: Enhanced asymmetrical modulation for half-bridge series resonant inverters in induction heating applications
- Authors: V. J. Jordán, E. J. Dede, J. L. Bellido
- Partner: UVEG, SiCtech
- Published: August 2023
- https://ietresearch.onlinelibrary.wiley.com/doi/full/10.1049/pel2.12573
2023: Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation
- Authors: S. Ditze, S. Ehrlich, D. Happel, A. Rosskopf
- Partner: FhG IISB
- Published: May 2023
- https://ieeexplore.ieee.org/document/10131351
2023: Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques
- Authors: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
- Partner: IUNET, FBH
- Published: May 2023
- https://ieeexplore.ieee.org/document/10117719
2023: Thermal management of vertical GaN transistors
- Authors: L. Mitterhuber, V. Leitgeb, M. Krainz, R. Strauss, T. Kaden, E. Bahat Treidel, F. Brunner, C. Huber, E. Kraker
- Partner: MCL, Bosch, FBH
- Published: April 2023
- https://ieeexplore.ieee.org/document/10100765
2023: Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes
- Authors: E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
- Partner: FBH
- Published: January 2023
- https://ieeexplore.ieee.org/abstract/document/10005283
2022: Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication
- Authors: F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
- Partner: IBS
- Published: December 2022
- https://link.springer.com/article/10.1557/s43580-022-00447-4
2022: Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN
- Authors: L. Tadmor, E. Brusaterra, E. Bahat Treidel, F. Brunner, N. Bickel, S. Vandenbroucke, C. Detavernier, J. Wuerfl, O. Hilt.
- Partner: FBH, UGent
- Published: November 2022
- https://iopscience.iop.org/article/10.1088/1361-6641/aca42a
2022: Process challenges and perspectives of vertical GaN power transistors on foreign substrates
- Authors: C. Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus
- Partner: Bosch, FBH, CNRS
- Published: October 2022
- https://hal.science/hal-03829109/document
2022: Embedding Solutions for vertical SiC and GaN Power Devices
- Authors: H. Linh Bach, A. Huang, H. Rauh, A. Schletz, M. P. M. Jank, M. März
- Partner: FhG IISB (and further organizations)
- Published: November 2022
- https://ieeexplore.ieee.org/document/9955257
2022: Impact of Gate Dielectric Deposition Temperature on p-type Inversion Channel MOSFETs fabricated on GaN-on-Si
- Authors: M. Henn, C. Huber
- Partner: Bosch
- Published: November 2022
- https://ieeexplore.ieee.org/document/9936574
2022: Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
- Authors: M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
- Partner: IUNET, FBH
- Published: November 2022
- https://www.sciencedirect.com/science/article/abs/pii/S0026271422001688?via%3Dihub
2022: A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles
- Authors: S. Ditze, S. Ehrlich, N. Weitz, M. Sauer, F. Aßmus, A. Sacher, C. Joffe, C. Seßler, P.
- Partner: FhG IISB (and further organization)
- Published: June 8, 2022; Electronics
- https://www.mdpi.com/2079-9292/11/12/1818
2022: Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices
- Authors: E. Bahat Treidel , M. Wolf, F. Brunner, O. Hilt and J. Würfl
- Partner: FBH
- Published: May, 2022; CS MANTECH Conference
- https://csmantech.org/wp-content/acfrcwduploads/field_5e8cddf5ddd10/post_6546/14.2_Areal_Vertical_Transmission_Line_Model_Measurement_for_Drift.pdf
2022: A resonant push–pull DC–DC converter with an intrinsic current source behavior for radio frequency power conversion
- Authors: N. Weitz, S. Utzelmann, S. Ditze; M. März
- Partner: FhG IISB
- Published: January 13, 2022; IEEE Transactions on Power Electronics
- https://ieeexplore.ieee.org/document/9681301
2022: Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates
- Authors: Z. Yu; Y. Z. Tan; C. F. Bayer; H. Rauh; A. Schletz; M. März; O. Birlem
- Partner: FhG IISB, NW
- Published: January 5, 2022; IEEE 23rd Electronics Packaging Technology Conference (EPTC)
- https://ieeexplore.ieee.org/document/9663890
2021: GaN-based power devices: physics, reliability and perspectives (Tutorial)
- Authors: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G. Verzellesi, E. Zanoni, E. Matioli
- Partner: IUNET, CNRS (and further organizations)
- Published: November 8, 2021; Journal of Applied Physics
- https://aip.scitation.org/doi/10.1063/5.0061354
You can find us on
